鐢㈠搧浠嬬垂锛�
V-650楂樼绱鍙鍒嗗厜鍏夊害瑷堥�氶亷绨″柈鐨勫弮鏁歌ō瀹�锛屾柟渚垮湴閫茶鍏夊害鍒嗘瀽銆佸畾閲忓垎鏋愩�佸嫊鍔涘娓│锛岄厤鍚堝皥妤殑鎺冩弿鍒嗘瀽杌熶欢锛屽彲瀵︾従鍏ㄦ尝闀峰厜璀滄巸鎻忋�佸娉㈤暦娓│銆�DNA/铔嬬櫧璩垎鏋�銆� 鎶�琛撳弮鏁革細
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娉㈤暦鑼冨湇
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190-900nm
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鍏夎瓬甯跺
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2.0nm
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鍏夊绯荤当
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闈炲皪绋卞瀭鐩村紡闆欏厜鏉熼珮鎬ц兘鍏ㄦ伅鍏夋煹1600姊�/姣背
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娉㈤暦婧栫⒑搴�
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±0.3nm
|
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娉㈤暦閲嶅京鎬�
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≤0.1nm
|
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鍏夊害婧栫⒑搴�
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±0.002A锛�0-0.5A锛�;±0.004A锛�0.5-1A锛�;±0.3%T锛�0-100%T锛�
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鍏夊害閲嶅京鎬�
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≤0.001A锛�0-0.5A锛�;≤0.002A锛�0.5-1A锛�;≤0.15%T锛�0-100%T锛�
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闆滄暎鍏�
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≤0.010%T锛�220nm,360nm铏曪級
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鍏夊害鑼冨湇
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-4 ~ 4A, 0-200%T.0-9999C
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鍩虹窔婕傜Щ
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±0.0003A/h 锛�500nm闋愮啽鍚庯級
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鍩虹窔骞崇洿搴�
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±0.001A
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鍣伈姘村钩
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0.0002Abs锛�500nm铏曪級
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宸ヤ綔鏂瑰紡
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A, T, C, E
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鍏夋簮
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閫插彛闀峰＝鍛芥皹鐕�锛岄帰鐕�
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妾㈡脯鍣�
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閫插彛鍏夐浕鍊嶅绠�
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椤ず鏂瑰紡
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PC鑱妯″紡
|
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鏁告摎杓稿嚭
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USB妯欐簴鏁告摎杓稿嚭鍙ｏ紝骞惰鎵撳嵃杓稿嚭鍙�
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闆绘簮
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AC 220V/50Hz 鎴�AC 110V/60Hz
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鍎�鍣ㄥ昂瀵�
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600 x 480 x 260mm
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閲嶉噺
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32kg
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鍦板潃锛氳タ瀹夊競澶櫧鍗楄矾5铏熺传钖囧皻灞よタ涓�妯撲竴鍠厓1407瀹CP鍌欙細